The Application Gallery features COMSOL Multiphysics® tutorial and demo app files pertinent to the electrical, structural, acoustics, fluid, heat, and chemical disciplines. You can use these examples as a starting point for your own simulation work by downloading the tutorial model or demo app file and its accompanying instructions.

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Heterojunction 1D

This benchmark model simulates three different heterojunction configurations under forward and reverse bias. It shows the difference in using the continuous quasi-Fermi level formulation versus the thermionic emission formulation for the charge transfer across the heterojunction. The simulated energy levels are compared between each configuration in order to illustrate the origin of the charge ...

MOSCAP 1D

The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both the low-frequency and the high-frequency C-V curves are computed.

Surface Trapping in a Silicon Nanowire Gate-All-Around Device

A gate-all-around MOSFET consists of a nanowire with a gate electrode wrapped around the circumference. Since the entire nanowire forms the channel, this configuration provides the best possible electrostatic control of the channel and offers a good candidate for the miniaturization of MOSFETs. This model analyzes a silicon nanowire gate-all-around device, with different trap densities at the ...

DC Characteristics of a MESFET

In a MESFET, the gate forms a rectifying junction that controls the opening of the channel by varying the depletion width of the junction. In this model we simulate the response of a n-doped GaAs MESFET to different drain and gate voltages. For a n-doped material the electron concentration is expected to be orders of magnitude larger than the hole concentration. Accordingly, it is possible to ...

Caughey-Thomas Mobility

With an increase in the parallel component of the applied field, carriers can gain energies above the ambient thermal energy and be able to transfer energy gained by the field to the lattice by optical phonon emission. The latter effect leads to a saturation of the carriers mobility. The Caughey Thomas mobility model adds high field velocity scattering to an existing mobility model (or to a ...

MOSCAP 1D Small Signal

The metal-silicon-oxide (MOS) structure is the fundamental building block for many silicon planar devices. Its capacitance measurements provide a wealth of insight into the working principles of such devices. This tutorial constructs a simple 1D model of a MOS capacitor (MOSCAP). Both the low- and high-frequency C-V curves are computed using the approach of small-signal analysis. The model ...

Lombardi Surface Mobility

Surface acoustic phonons and surface roughness have an important effect on the carrier mobility, especially in the thin inversion layer under the gate in MOSFETs. The Lombardi surface mobility model adds surface scattering resulting from these effects to an existing mobility model using Matthiessen’s rule. This model demonstrates how to use the Lombardi surface mobility model for the electron ...

Gross–Pitaevskii Equation for Bose–Einstein Condensation

This tutorial model solves the Gross–Pitaevskii Equation for the ground state of a Bose–Einstein condensate in a harmonic trap, using the Schrödinger Equation physics interface in the Semiconductor Module. The equation is essentially a nonlinear single-particle Schrödinger Equation, with a potential energy contribution proportional to the local particle density. The eigenvalue study is not ...

Self-Consistent Schrödinger-Poisson Results for a GaAs Nanowire - new

This benchmark model simulates a GaAs nanowire using the self-consistent Schrödinger-Poisson theory to compute the electron density and the confining potential profiles. The predefined Schrödinger-Poisson multiphysics coupling feature is combined with the dedicated Schrödinger-Poisson study type to provide streamlined procedure for model setup and automated creation of self-consistent iterations ...

Heterojunction Tunneling - new

This benchmark model simulates a graded heterojunction using the thermionic emission formulation for the charge transfer over the junction. It shows the additional contribution to the current density from the quantum tunneling effect across the potential barrier, using the WKB approximation. Even though the simulated system is 1D in nature, a 2D model is created to illustrate the procedure for ...