Application ID: 16367
This benchmark simulates the behavior of an ideal Schottky barrier diode made of a tungsten contact deposited on a silicon wafer. The resulting J-V (current density vs. applied voltage) curve obtained from the model under forward bias is compared with experimental measurements found in the literature
This application was built using the following:Semiconductor Module
The combination of COMSOL® products required to model your application depends on the physics interfaces that define it. Particular physics interfaces may be common to several products (see the Specification Chart for more details). To determine the right combination of products for your project, you should evaluate all of your needs in light of each product's capabilities, consultation with the COMSOL Sales and Support teams, and the use of an evaluation license.