InGaN/AlGaN Double Heterostructure LED

Application ID: 20299


This model simulates a GaN based light emitting diode device. The emission intensity, spectrum, and efficiency are calculated as a function of the driving current. Direct radiative recombination across the bandgap is modeled, as well as non-radiative Auger and Trap-Assisted Scattering processes. This results in a sub-linear increase in emission intensity with increasing current, which is a common characteristic of LED devices known as LED droop.

This model example illustrates applications of this type that would nominally be built using the following products:

Semiconductor Module