h_outlet 3[mm] Outlet height d_cell 298[mm] Cell diameter h_cell 200[mm] Plating cell height d_wafer 300[mm] Wafer diameter h_gap 6[mm] Distance gap between cell and wafer flow_in 20[l/min] Inflow a_in (d_cell/2)^2*pi Inflow area v_in flow_in/a_in Inlet velocity RPM 30 Revolutions per minute omega RPM*2*pi[rad/min] Angular velocity D_Cu 5e-6[cm^2/s] Diffusion coefficient of Cu ions c_bulk 0.3[mol/l] Bulk concentration sigma 0.5[S/cm] Electrolyte conductivity i0 10[A/m^2] Exchange current density t_seed 75[nm] Seed layer thickness r_seed 1.7e-6[ohm*cm] Resistivity of Cu seed layer j_avg_wafer 5[mA/cm^2] Average current density on wafer a_wafer (d_wafer/2)^2*pi Wafer area I_tot j_avg_wafer*a_wafer Total cell current mu 0.001[Pa*s] Electrolyte viscocity rho 1100[kg/m^3] Electrolyte density